Method of manufacturing a semiconductor light-emitting device

Details Method of manufacturing a semiconductor light-emitting device Method of manufacturing a semiconductor light-emitting device

2011-05-03

2011-05-03

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S013000, C257S079000, C257S749000, C257SE21324

Reexamination Certificate

active

07935980

ABSTRACT:
A semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. Also disclosed is a method of manufacturing a semiconductor light-emitting device1in which an n-type semiconductor layer (13), a light-emitting layer (14), and a p-type semiconductor layer (15) are formed on a substrate (11), a transparent positive electrode (16) is formed on the p-type semiconductor layer (15), a positive electrode bonding pad (17) is formed on the transparent positive electrode (16), and a negative electrode bonding pad (18) is formed on the n-type semiconductor layer (13).

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