Method of manufacturing a semiconductor light-emitting device

Details Method of manufacturing a semiconductor light-emitting device Method of manufacturing a semiconductor light-emitting device

1992-01-28

1993-01-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437127, 437905, 148DIG95, 148DIG99, H01L 2120

Patent

active

051822288

ABSTRACT:
In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.

REFERENCES:
patent: 4845724 (1989-07-01), Hayakawa et al.
patent: 4990466 (1991-02-01), Shieh et al.
patent: 5053356 (1991-10-01), Mitsui et al.
K. Itoh, et al "Embedded-Strip GaAs-GaAlAs Double-Heterostructure Lasers with Polycrystalline GaAsP Layers-I: Lasers with Cleaved Mirrors", IEEE Journal of Quantum Electronics, vol. QE-13, No. 8, Aug. 1977, pp. 623-627.

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