Method of manufacturing a semiconductor light emitting...

Details Method of manufacturing a semiconductor light emitting... Method of manufacturing a semiconductor light emitting...

2006-04-11

2006-04-11

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S604000, C257S078000, C257S103000

Reexamination Certificate

active

07026179

ABSTRACT:
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 μm. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H≦70×10−4(cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos−1(1−HCZ), where C (cm−1) is the proportionality constant when the radius of curvature of the substrate ρ (cm) is expressed as 1/ρ=CZ.

REFERENCES:
patent: 5970080 (1999-10-01), Hata
patent: 6469320 (2002-10-01), Tanabe et al.
patent: 6488767 (2002-12-01), Xu et al.
patent: 6829270 (2004-12-01), Suzuki et al.
patent: 2001/0035580 (2001-11-01), Kawai
patent: 2001/0040245 (2001-11-01), Kawai

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