Method of manufacturing a semiconductor laser with autodoping co

Details Method of manufacturing a semiconductor laser with autodoping co Method of manufacturing a semiconductor laser with autodoping co

1987-12-28

1989-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG7, 148DIG41, 148DIG56, 148DIG72, 148DIG95, 148DIG110, 156613, 372 48, 437 96, 437129, 437133, 437167, 437949, 437971, 437987, H01L 21208, H01L 700

Patent

active

048552500

ABSTRACT:
A method of manufacturing a semiconductor light emitting device by forming a compound semiconductor structure with homo- or heterojunction therein having a first p-type compound semiconductor crystal layer at the top of the structure, growing a second p-type compound semiconductor crystal layer on the structure in a reactor, wherein, before the beginning of the crystal growth step, a p-type dopant is caused to flow into the reactor in which the structure is placed. In some embodiments, the flow of the p-type dopant continues after the completion of the crystal growth.

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Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition Self-Aligned GaAlAs-GaAs Double-Heterostructure Lasers, by J. J. Coleman and P. D. Dapkus, in Appl. Phys. Lett. 37(3), Aug. 1, 1980.

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