Method of manufacturing a semiconductor laser including two sets

Details Method of manufacturing a semiconductor laser including two sets Method of manufacturing a semiconductor laser including two sets

1995-10-12

1998-07-14

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

438 42, 438462, H01L 2100, H01L 21301, H01L 2146, H01L 2178

Patent

active

057803200

ABSTRACT:
A linear active layer, a current block layer and a clad layer are formed on the first major surface of a wafer, while a first electrode is formed on the second major surface of the wafer. A linear first opening is formed in the first electrode. The wafer exposed to the first opening is etched to form a first guide groove linearly extending in a direction perpendicular to the active layer. A second electrode is formed on the clad layer and etched to form a linear second opening therein. The clad layer, current block layer and wafer, located directly under the second opening, are etched to form a second guide groove thereon so as to extend in a direction parallel to the active layer. The wafer is cleaved along the first guide groove to form bars each having semiconductor lasers. The bars are arranged in parallel to one another and separated from one another by the second guide groove. The wafer is cleaved or cut along the second guide groove to obtain semiconductor chips.

REFERENCES:
patent: 4237601 (1980-12-01), Woolhouse et al.
patent: 5104023 (1992-04-01), Nishiguchi et al.
patent: 5198686 (1993-03-01), Yoshimura
patent: 5284792 (1994-02-01), Forster et al.
patent: 5314844 (1994-05-01), Imamura
patent: 5332406 (1994-07-01), Takeuchi et al.

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