Method of manufacturing a semiconductor integrated circuit devic

Details Method of manufacturing a semiconductor integrated circuit devic Method of manufacturing a semiconductor integrated circuit devic

1990-01-16

1991-12-31

Chaudhuri, Olilk

Fishing, trapping, and vermin destroying

437173, 148DIG152, 156603, H01L 21205, H01L 21268, H01L 2176

Patent

active

050772350

ABSTRACT:
A method of manufacturing a semiconductor integrated circuit device having a SOI structure includes the following steps. The first step is to form a semiconductor layer on a dielectric substrate. The second step is to form an oxide layer on the formed semiconductor layer. The third step is to form a nitride layer on the formed oxide layer. The fourth step is to remove a part of a plurality of layers composed of the semiconductor layer, the oxide layer, and a nitride layer so as to form a separated region in the layers. The fifth step is to coat a cooling agent on a surface of the nitride layer. The sixth step is to irradiate an energy beam from an outer surface of the cooling agent so as to monocrystallize the semiconductor layer. The seventh step is to remove the cooling agent from the surface of the nitride layer. And the final step is to oxidize a portion of the semiconductor layer located in the separated region by using the nitride layer. A semiconductor integrated circuit device having a SOI structure includes a semiconductor layer formed on a dielectric substrate, an oxide film formed on the semiconductor layer, a nitride layer formed on the oxide film, and a monocrystallized and oxidized semiconductor layer formed in hole portions formed in the semiconductor layer passing through the oxide layer and the nitride layer.

REFERENCES:
patent: 3970486 (1976-07-01), Kooj
patent: 4719183 (1988-01-01), Maekawa
patent: 4822752 (1989-04-01), Sugahara

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor integrated circuit devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor integrated circuit devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor integrated circuit devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1509993