Method of manufacturing a semiconductor integrated circuit appar

Details Method of manufacturing a semiconductor integrated circuit appar Method of manufacturing a semiconductor integrated circuit appar

1996-04-01

1998-02-17

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, 437 51, H01L 21265

Patent

active

057190666

ABSTRACT:
A lower layer diffusion layer of a metal-insulator-semiconductor-type (MIS-type) condenser is formed by implanting and diffusing phosphorus into an upper portion of an epitaxial layer formed on a semiconductor substrate. Thereafter, a silicon nitride film functioning as a dielectric film of the MIS type condenser is formed on the lower layer diffusion layer, and a poly-silicon film functioning as a protective film for the silicon nitride film is formed on the silicon nitride film in succession to the formation of the silicon nitride film without performing any etching operation. The formation of the silicon nitride film and the poly-silicon film is performed according to a vacuum chemical vapor deposition in the same chamber to prevent the silicon nitride film from being exposed to oxygen. Thereafter, the silicon nitride film and the poly-silicon film are baked to form an oxidized film surrounding the silicon nitride film and the poly-silicon film. Thereafter, a metal is deposited on the poly-silicon film to form an upper electrode of the MIS type condenser. Therefore, the deterioration of dielectric characteristics of the MIS type condenser can be prevented.

REFERENCES:
patent: 4001869 (1977-01-01), Brown
patent: 4377029 (1983-03-01), Ozawa
patent: 4717680 (1988-01-01), Piotrowski
patent: 4805071 (1989-02-01), Hutter et al.
patent: 4898839 (1990-02-01), Fujinuma et al.

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