Semiconductor device manufacturing: process – Miscellaneous
Reexamination Certificate
2006-06-20
2006-06-20
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Miscellaneous
C438S983000, C257S010000
Reexamination Certificate
active
07064090
ABSTRACT:
A manufacturing technique for a zener diode which includes forming a first semiconductor region in a region such as a well region at a primary face of a semiconductor substrate and then forming a second semiconductor region of opposite conductivity type thereover. The second semiconductor region covers an area greater than the underlying first semiconductor region. The method further calls for forming an insulating film on the primary face of the substrate followed by the forming connection holes in the insulating film to expose an upper part of the second semiconductor region located outside the area covered by the junction affected between the first and second semiconductor regions. This is followed by the formation of a wire at the upper part of the insulating film in which an electrical connection is affected between the wire and the second semiconductor region through the plural connection holes which are distributively arranged.
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Kamigaki Yoshiaki
Minami Shin-ichi
Owada Fukuo
Yasuoka Hideki
Antonelli, Terry Stout and Kraus, LLP.
Dang Phuc T.
Hitachi , Ltd.
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