Method of manufacturing a semiconductor integrated circuit...

Details Method of manufacturing a semiconductor integrated circuit... Method of manufacturing a semiconductor integrated circuit...

2005-06-21

2005-06-21

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S630000, C438S649000, C438S651000, C438S655000

Reexamination Certificate

active

06908837

ABSTRACT:
A method of manufacturing a semiconductor integrated circuit device includes the steps of depositing a first insulating film over a first conductive layer, patterning the first insulating film by using a resist film as a mask to form a cap film, and removing the resist film. After which, a gate electrode of a MISFET is formed by etching the first conductive layer using the cap film as a mask. A second insulating film is deposited over the gate electrode and the cap film and a side wall spacer formed on side surfaces of the gate electrode by etching the second insulating film. After which, a salicide layer is selectively formed on the gate electrode. The cap film is removed by over-etching the first insulating film to etch the cap film.

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