Method of manufacturing a semiconductor imaging device...

Details Method of manufacturing a semiconductor imaging device... Method of manufacturing a semiconductor imaging device...

2007-11-27

2007-11-27

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S786000

Reexamination Certificate

active

10974575

ABSTRACT:
A semiconductor device includes a plurality of photoelectric conversion photodiodes provided on a silicon substrate, and a refractive index matching film provided on each of the photodiodes. The refractive index matching film is composed of an insulating compound layer represented by SiOxNy(0≦x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y. The oxygen content of the compound layer is the lowest at the silicon interface with each photodiode and the highest in an upper portion of the compound layer, and the nitrogen content is the highest at the silicon interface with each photodiode and the lowest in the upper portion of the compound layer. Therefore, multiple reflection can be decreased to improve light receiving sensitivity, as compared with a case in which a SiN single layer and a SiO2single layer are laminated.

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