Method of manufacturing a semiconductor IIL device with dielectr

Details Method of manufacturing a semiconductor IIL device with dielectr Method of manufacturing a semiconductor IIL device with dielectr

1995-11-17

1997-12-02

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 34, 437 55, 437 61, 437 70, H01L 21265

Patent

active

056935439

ABSTRACT:
n type epitaxial layers are formed on the main surface of a p type semiconductor substrate. A field oxide film is selectively formed in the surface of n type epitaxial layers. An n type diffusion region is formed in n type epitaxial layers positioned directly under field oxide film. A base region and a collector region are respectively formed in the surface of n type epitaxial layer positioned between field oxide films. As a result, a semiconductor device having an IIL circuit is obtained which can suppress the parasitic bipolar operation between base regions, reduce the junction capacitance between the base region and the emitter region and which can be reduced in size.

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