Method of manufacturing a semiconductor film by plasma CVD...

Details Method of manufacturing a semiconductor film by plasma CVD... Method of manufacturing a semiconductor film by plasma CVD...

2007-04-03

2007-04-03

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S485000, C438S486000

Reexamination Certificate

active

10190755

ABSTRACT:
There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1×1020/cm3to 1×1021/cm3and has an amorphous structure, typically, an amorphous silicon film.

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