Method of manufacturing a semiconductor element

Details Method of manufacturing a semiconductor element Method of manufacturing a semiconductor element

1993-11-26

1995-10-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437187, 437 21, 427487, 427485, 148DIG45, H01L 21765

Patent

active

054628865

ABSTRACT:
A method of manufacturing a semiconductor element such as a thin film transistor or a photo diode, in which a voltage is applied to an organic insulating layer in the direction vertical to a substrate during a coating process of polyimide constituting the interlayer insulating layer formed over a semiconductor layer, a prebaking process for initial hardening which immediately follows the coating process, and a postbaking process after the pattern formation of the interlayer insulating layer.

REFERENCES:
patent: 4704299 (1987-11-01), Wielonski et al.
patent: 4983546 (1991-01-01), Hyun et al.
patent: 4999215 (1991-03-01), Akagi et al.
patent: 5270267 (1993-12-01), Ouellet
Ogawa, "Degradation of Sub-Threshold Characteristics in a--Si TFT with Polyimide Passivation," Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1771966