Method of manufacturing a semiconductor device with polysilicon

Details Method of manufacturing a semiconductor device with polysilicon Method of manufacturing a semiconductor device with polysilicon

1987-10-19

1990-01-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 60, 437918, 437191, 437193, H01L 21265

Patent

active

048928399

ABSTRACT:
A method of manufacturing a semiconductor device in which a base of a second conductivity type is provided in a semiconductor substrate of a first conductivity type, which operates as a collector. An emitter of the first conductivity type is provided in the base, a pn junction between the collector and the base is exposed on the surface of the semiconductor substrate, and the emitter is provided with stabilizing resistors. The method comprises the steps of providing a silicon oxide film over the entire surface of the semiconductor device, and a polysilicon film over both the emitter and a first portion of the pn junction exposed on the surface of the semiconductor substrate, and impurities are diffused into only a second portion of the polysilicon film located over the emitter to reduce the resistance of the second portion of the polysilicon film.

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