Method of manufacturing a semiconductor device with increased br

Details Method of manufacturing a semiconductor device with increased br Method of manufacturing a semiconductor device with increased br

1995-12-21

1997-04-29

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Isolation by pn junction only

438442, 438226, 438526, H01L 21265

Patent

active

056248580

ABSTRACT:
A low concentration impurity region 6 of a second conductivity type is formed to cover lower portion of a high concentration impurity region 8 of the second conductivity type. Consequently, impurity concentration gradient between the high concentration impurity region 8 of the second conductivity type and the low concentration impurity layer 2 of a first conductivity type can be made moderate to relax the electric field, which leads to provision of higher breakdown voltage of the semiconductor device. Further, the depth of impurity diffusion of the low concentration impurity region 6 of the second conductivity type from the main surface of the low concentration impurity layer 2 of the first conductivity type is made at least three times the depth of impurity diffusion of the high concentration impurity region 8 of the second conductivity type from the main surface of the low concentration impurity layer 2 of the first conductivity type. Therefore, minimum dimensions necessary for suppressing the electric field can be set in the semiconductor device, and therefore the semiconductor device comes to have higher breakdown voltage efficiently while not preventing miniaturization.

REFERENCES:
patent: 3460006 (1969-08-01), Strull
patent: 3622842 (1971-11-01), Oberai
patent: 5218228 (1993-06-01), Williams et al.
Terashima et al., "Development of Structure of 600V HIVC", published Oct. 29, 1992.
Proceedings of The 5th International Symposium on Power Semiconductor Devices and ICs, ISPSD '93, published May 18, 1993.

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