Method of manufacturing a semiconductor device with identificati

Fishing – trapping – and vermin destroying

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437924, 148DIG102, H01L 2166

Patent

active

050513745

ABSTRACT:
A semiconductor device with an identification pattern is manufactured by forming a field oxide layer on its substrate, implanting impurity ions on this layer through a patterned mask and exposing the layer to an etching liquid after the mask is removed. A pattern is formed on the device due to a difference in the rate of etching between ion-implanted and masked parts.

REFERENCES:
patent: 4125418 (1978-11-01), Vinton
patent: 4233091 (1980-11-01), Kawabe
patent: 4305760 (1981-12-01), Trudel
patent: 4362766 (1982-12-01), Dannhauser et al.
patent: 4450041 (1984-05-01), Aklufi
patent: 4522656 (1985-06-01), Kuhn-Kuhnenfell

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