Method of manufacturing a semiconductor device with copper...

Details Method of manufacturing a semiconductor device with copper... Method of manufacturing a semiconductor device with copper...

2006-08-29

2006-08-29

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S723000

Reexamination Certificate

active

07098139

ABSTRACT:
A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge off after forming the opening in the same chamber as the formation of the opening.

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