Semiconductor device manufacturing: process – Voltage variable capacitance device manufacture
Patent
1996-12-18
1999-06-22
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Voltage variable capacitance device manufacture
438380, 438505, 438508, H01L 2120
Patent
active
059151870
ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second zone (4) of a second conductivity type opposed to the first is provided on a silicon substrate (1), a pn junction (5) being formed between the second and first zones (3, 4, respectively). According to the invention, the method is characterized in that the epitaxial layer (2) is provided by means of a CVD process at a temperature below 800.degree. C., the epitaxial layer (2) being provided in that first the first zone (3) and then the second zone (4) are epitaxially provided on the substrate (1), while no heat treatments at temperatures above 800.degree. C. take place after the epitaxial layer (2) has been provided. The measure according to the invention renders it possible to achieve properties of semiconductor devices manufactured in accordance with the invention, for example the capacitance-voltage (CV) relation of varicap diodes, within wide limits according to specifications. In addition, semiconductor devices manufactured by the method according to the invention require no post-diffusion or measurement steps in order to bring the properties of the semiconductor device up to specifications.
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Bulik Oscar J. A.
De Boer Wiebe B.
Dekker Ronald
Huisman Frederikus R. J.
Biren Steven R.
Nguyen Tuan H.
U.S. Philips Corporation
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