Method of manufacturing a semiconductor device with a heterojunc

Details Method of manufacturing a semiconductor device with a heterojunc Method of manufacturing a semiconductor device with a heterojunc

1993-07-22

1994-10-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437933, 437969, H01L 21268

Patent

active

053546962

ABSTRACT:
A method of manufacturing a semiconductor device in which a surface zone (3) adjoining a surface (2) is formed in a silicon semiconductor body (1) by local application of carbon and dopant atoms, the carbon atoms being provided by means of implantation (4). Halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out such that non-bonded halogen atoms are removed from the surface zone (3). Such a method is suitable for making a surface zone (3) which has a greater bandgap than silicon. The surface (3) is suitable, for example, for making an emitter region of a heterojunction bipolar transistor (HBT).

REFERENCES:
patent: 4559696 (1985-12-01), Anand et al.
patent: 4992839 (1991-02-01), Shirai
patent: 5137839 (1992-08-01), Niitsu
patent: 5158897 (1992-10-01), Sato et al.
"Si Hetero-Bipolar Transistor with Fluorine-Doped SIC Emitter and a Thin, Highly Doped Epitaxial Base" Sugii et al., IEEE Transactions on Electron Devices, vol. 37, No. 11, Nov. 1990.

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