Method of manufacturing a semiconductor device with a copper wir

Details Method of manufacturing a semiconductor device with a copper wir Method of manufacturing a semiconductor device with a copper wir

1990-10-01

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437191, 437195, 148DIG35, H01L 2146

Patent

active

050844121

ABSTRACT:
According to this invention, there is provided to a semiconductor device comprising a semiconductor substrate on which an element is formed, an insulating interlayer formed on the semiconductor substrate, and a wiring layer having a structure in which a surface of a copper layer in a crystal state is covered with a nitride of a metal not forming an intermetallic compound with copper and the metal and/or the metal nitride is present at grain boundaries of the copper layer.

REFERENCES:
patent: 4742014 (1988-05-01), Hooper et al.
patent: 4910169 (1990-03-01), Hoshino
VLSI Multilevel Interconnection Conference (1989), pp. 226-232, K. Hoshino et al., 1989 Proceedings Sixth International IEEE VLSI Multilevel Interconnection Conference.

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