Method of manufacturing a semiconductor device with a conductor

Details Method of manufacturing a semiconductor device with a conductor Method of manufacturing a semiconductor device with a conductor

1998-09-16

2000-06-06

Dutton, Brian

Semiconductor device manufacturing: process

Making passive device

438240, 438396, 438608, H01L 2120

Patent

active

060717882

ABSTRACT:
A conductor film is deposited on a semiconductor substrate via an insulation film, and jogs formed on the surface of the conductor film immediately after the deposition are removed by using the chemical mechanical polishing method, the etch back method, or the like. And on the surface of the conductor film thus flattened, a mask member is formed of an inorganic insulation film such as a SOG film or a silicon oxide film deposited by using the chemical vapor deposition method. By dry etching using this mask member as the etching mask, the above described conductor film is processed to have a pattern of a semiconductor wiring layer or a capacitor electrode. As a result, fine processing of the conductor film having a columnar crystal structure is facilitated. In addition, it becomes possible to improve the precision of the electrode shape of the capacitor and implement a highly reliable capacitor.

REFERENCES:
patent: 5619393 (1997-04-01), Summerfelt et al.
patent: 5861332 (1999-01-01), Yu et al.
patent: 5956224 (1999-09-01), Jeon
Lesaicherre, et al., Digest of Technical Papers of 1994, International Electron Devices Meeting, "A Gbit-scale DRAM stacked capacitor technology with ECR MOCVD SrTiO3 and RIE patterned RuO2/TiN storage nodes", pp. 831-834.

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