Method of manufacturing a semiconductor device with a bipolar tr

Details Method of manufacturing a semiconductor device with a bipolar tr Method of manufacturing a semiconductor device with a bipolar tr

1999-09-10

2000-11-21

Bowers, Charles

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438315, 438336, 438343, 438365, H01L 21331, H01L 218222

Patent

active

061502243

ABSTRACT:
The invention relates to the manufacture of a so-called differential bipolar transistor comprising a base (1A), an emitter (2) and a collector (3), the base (1A) being formed by applying a doped semiconducting layer (1) which locally borders on a monocrystalline part (3) of the semiconductor body (10) where it forms the (monocrystalline) base (1A), and which semiconducting layer (1) borders, outside said monocrystalline part, on a non-monocrystalline part (4, 8) of the semiconductor body (10) where it forms a (non-monocrystalline) connecting region (1B) of the base (1A). The non-monocrystalline part (4, 8) of the semiconductor body (10) is obtained by covering the semiconductor body (10) with a mask (20) and replacing on either side thereof a part (8) of the semiconductor body (10) by an electrically insulating region (8) and by providing this, prior to the application of the semiconducting layer (1) with a polycrystalline semiconducting layer (4). The known method, in which an aperture is etched above the collector (3) after deposition of the polycrystalline layer (4), is relatively laborious. In a method in accordance with the invention, the polycrystalline layer (4) is selectively provided on the electrically insulating region (8), in which process use is made of the mask (20) to form the electrically insulating region (8). This method is less laborious than the known method. In addition, the resultant transistors have excellent properties and their dimensions may be very small. Preferably, both in the manufacture of the insulating region (8), preferably an oxide-filled groove (8), and in the process of selectively applying the polycrystalline layer (4) to the insulating region, use is made of a deposition step followed by a chemico-mechanical polishing step.

REFERENCES:
patent: 5106767 (1992-04-01), Comfort et al.
patent: 5656514 (1997-08-01), Ahlgren et al.
PHN 17,066, U.S. Ser. No. 09/387,629, Filed: Aug. 31, 1999.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device with a bipolar tr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device with a bipolar tr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device with a bipolar tr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1256180