Method of manufacturing a semiconductor device with a...

Details Method of manufacturing a semiconductor device with a... Method of manufacturing a semiconductor device with a...

2005-03-25

2008-11-11

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S690000, C438S692000, C257SE21546

Reexamination Certificate

active

07449393

ABSTRACT:
In a method of manufacturing a semiconductor device with a shallow trench isolation structure, trenches are formed to extend into a semiconductor substrate. Subsequently, a first insulating film is formed to fill the trenches and to cover a whole surface of the semiconductor substrate, and then a first chemical mechanical polishing (CMP) method is carried out to remove the first insulating film such that the first insulating film is left only in the trenches. Subsequently, a second insulating film is formed to fill the trenches and to cover a whole surface of the semiconductor substrate, and a second CMP method is carried out to remove the second insulating film such that the second insulating film is left only in the trenches.

REFERENCES:
patent: 5702977 (1997-12-01), Jang et al.
patent: 6245641 (2001-06-01), Shiozawa et al.
patent: 6355517 (2002-03-01), Sunami et al.
patent: 6905967 (2005-06-01), Tian et al.
patent: 2005/0006697 (2005-01-01), Hsieh
patent: 2005/0142725 (2005-06-01), Jung et al.
patent: 2005/0153519 (2005-07-01), Lu et al.
patent: 2005/0170608 (2005-08-01), Kiyotoshi et al.
patent: 2005/0221559 (2005-10-01), Sumino et al.
patent: 2002-110780 (2002-04-01), None

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