Method of manufacturing a semiconductor device wherein natural o

Details Method of manufacturing a semiconductor device wherein natural o Method of manufacturing a semiconductor device wherein natural o

1992-10-19

1994-04-26

Fourson, George

Fishing, trapping, and vermin destroying

437983, 134 3, 148DIG118, H01L 21306, H01L 21336

Patent

active

053066723

ABSTRACT:
A method for forming a gate oxide film of a high reliability and a superior performance applicable to a very-large-scale integrated circuit and a manufacturing equipment for the same are disclosed. The method includes steps for treating a substrate with a HF solution, then treating with a HF gas, and subsequently treating with H.sub.2 gas of a high purity, and oxidizing the substrate. The step of the H.sub.2 gas treatment is carried out at a temperature equal to or above 200.degree. C. and at a pressure equal to or below 10 Torr. The manufacturing equipment comprises loading-lock chambers between a HF gas treatment chamber and a H.sub.2 gas treatment chamber and between the H.sub.2 gas treatment chamber and a thermal oxidation chamber for avoiding exposure of the substrate to the air during transferring the substrate between the chambers.

REFERENCES:
patent: 5030319 (1991-07-01), Nishino et al.
Nishizawa, J. et al, "Ultrashallow High Doping . . . Doping", Appl. Phys. Lett. 56(14) 2 Apr. 1990, pp. 1334-1335.

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