Method of manufacturing a semiconductor device whereby a layer c

Details Method of manufacturing a semiconductor device whereby a layer c Method of manufacturing a semiconductor device whereby a layer c

1992-09-17

1993-11-30

Wilczewski, Mary

Fishing, trapping, and vermin destroying

2041921, 20419212, 204298, 204 09, 118666, 148DIG158, H01L 2144, C23C 1400

Patent

active

052665240

ABSTRACT:
A method of manufacturing a semiconductor device whereby a layer (3) containing aluminium is deposited by means of a sputter deposition process on a surface (1) of a semiconductor body (2) which is placed on a holder (21) in a reaction chamber (20). The semiconductor body (2) is cooled down to a temperature below 150 K. during the deposition process. A smooth, flat layer with a good step coverage is deposited in this way.

REFERENCES:
patent: 4886565 (1989-12-01), Koshiba et al.
patent: 4911812 (1990-03-01), Kudo et al.
patent: 5085750 (1992-02-01), Saraoka et al.

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