Method of manufacturing a semiconductor device utilizing simulta

Details Method of manufacturing a semiconductor device utilizing simulta Method of manufacturing a semiconductor device utilizing simulta

1974-11-26

1976-01-06

Lovell, C.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569, 29576, 29577, 148190, 148191, 357 40, 357 44, 357 48, 357 90, H01L 2120, H01L 2122, H01L 2704

Patent

active

039309096

ABSTRACT:
A method of making a semiconductor device is described in which opposite-type impurities are introduced into the same surface of a substrate in such manner that the region of impurities of the opposite-type to that of the substrate overlaps completely the other substrate surface region. Then an epitaxial layer is grown on the surface of the substrate. There is thus formed two buried layers of which the one with the same type conductivity of the substrate is completely separated and isolated from the latter by the buried layer of opposite-type conductivity. Methods are also described for the manufacture of complementary bipolar transistors, in which the pnp type is made by the above described method.

REFERENCES:
patent: 3089794 (1963-05-01), Marinace
patent: 3260624 (1966-06-01), Wiesner
patent: 3260902 (1966-07-01), Porter
patent: 3327182 (1967-06-01), Kisinko
patent: 3335341 (1967-08-01), Lin
patent: 3449643 (1969-06-01), Imaizumi
patent: 3474308 (1969-10-01), Kronlage
patent: 3481801 (1969-12-01), Hugle

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