Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-01-11
1984-02-14
Saba, W. G.
Metal working
Method of mechanical manufacture
Assembling or joining
29590, 29591, 148174, 148175, 148188, 357 34, 357 59, 357 65, 357 68, 427 85, 427 86, H01L 2120, H01L 21225
Patent
active
044307934
ABSTRACT:
A semiconductor device is fabricated by a process in which an aperture (4) is an insulating layer (3) along a surface (2) of a semiconductor body is utilized in defining the lateral extents of zones (6, 7, and 8) in a circuit element of the device. In particular, the insulating layer is first provided with the aperture along the surface. A semiconductor layer (5) is formed on the insulating layer, including the portion within the aperture. Using the edge of the insulating layer along the aperture as a masking edge, a pair of opposite-conductivity dopants are introduced selectively into the aperture and a third dopant is introduced through all of the aperture into the body. The third dopant may be introduced into the body before the semiconductor layer is formed.
REFERENCES:
patent: 3611067 (1971-10-01), Oberlin et al.
patent: 4063901 (1977-12-01), Shiba
patent: 4074304 (1978-02-01), Shiba
patent: 4161745 (1979-07-01), Slob
patent: 4190949 (1980-03-01), Ikeda et al.
Kemlage, B. M., "Prevention of Metal to Base Shorting", I.B.M. Tech. Discl. Bull., vol. 13, No. 5, Oct. 1970, pp. 1299-1300.
Briody T. A.
Mayer R. T.
Meetin R. J.
Saba W. G.
U.S. Philips Corporation
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