Method of manufacturing a semiconductor device utilizing selecti

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29569L, 29578, 29580, 148172, 148175, 156654, 156655, 156662, 357 16, 357 18, 357 56, H01L 21308, H01L 21208

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041371070

ABSTRACT:
The invention relates to a method in which a system of layers with a contact layer of gallium arsenide is formed epitaxially. In a second epitaxy treatment a layer of gallium aluminum arsenide is formed selectively. In order not to form the latter layer on the contact layer of gallium arsenide, the latter is shielded from gallium aluminum arsenide by means of a masking layer having a composition which differs from that of the layer to be provided selectively, so that the masking layer can afterwards be removed selectively.

REFERENCES:
patent: 3824493 (1974-07-01), Hakki
patent: 3833435 (1974-09-01), Logan et al.
patent: 3849790 (1974-11-01), Gottsmann et al.
patent: 3893044 (1975-07-01), Dumke et al.
patent: 3915765 (1975-10-01), Cho et al.
patent: 3938172 (1976-02-01), Lockwood
patent: 3961996 (1976-06-01), Namizaki et al.
patent: 4011113 (1977-03-01), Thompson et al.
Tsukada, T., "GaAs-Ga.sub.1-x Al.sub.x As . . . Lasers" J. Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.
Dumke et al., "Double-Heterojunction GaAs Injection Laser" I.B.M. Tech. Discl. Bull., vol. 15, No. 6, Nov. 1972, p. 1998.
Lee et al., "Low-Threshold . . . Heterostructure Laser" Applied Physics Letters, vol. 29, No. 6, Sep. 1976, pp. 365-367.

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