Method of manufacturing a semiconductor device utilizing monocry

Details Method of manufacturing a semiconductor device utilizing monocry Method of manufacturing a semiconductor device utilizing monocry

1975-10-17

1976-12-14

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29579, 29580, 148175, 148187, 156 3, 156 13, 156 17, 156612, 357 40, 357 48, 357 49, 357 50, 357 59, 427 88, 427259, 427272, H01L 2120, H01L 2176

Patent

active

039973786

ABSTRACT:
In the manufacture of a semiconductor device, when an epitaxially-grown layer is formed on a semiconductor substrate partially formed with an oxide, a polycrystalline layer is formed on the oxide; the polycrystalline part is used as an isolation region for elements to be formed in the epitaxially-grown layer. The oxide for growing the polycrystalline layer is buried and formed in the semiconductor substrate at a depth at which a breakdown voltage between the elements is attained, whereby the width of the isolation region can be made small, so as to increase the density of integration of the semiconductor device.

REFERENCES:
patent: 3135638 (1964-06-01), Cheney et al.
patent: 3386865 (1968-06-01), Doo
patent: 3447984 (1969-06-01), Castrucci et al.
patent: 3500139 (1970-03-01), Frouin et al.
patent: 3537925 (1970-11-01), Chen
patent: 3607466 (1971-09-01), Miyazaki
patent: 3617822 (1971-11-01), Kobayashi
patent: 3861968 (1975-01-01), Magdo et al.
patent: 3947299 (1976-03-01), Weijland et al.
patent: 3954522 (1976-05-01), Roberson

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