Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1977-04-13
1979-02-13
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29578, 148 15, 148187, 156644, 156654, 156657, 156662, 357 23, 357 42, 357 54, H01L 21225, H01L 2978
Patent
active
041394020
ABSTRACT:
A method of manufacturing a semiconductor device, in particular a device having two complementary insulated gate field effect transistors, in which an aperture is provided in a masking layer and in said aperture a zone is diffused in the body from a highly doped layer, in particular a phosphorus glass layer. According to the invention, a thermal oxide layer is formed in the aperture in a first heating step during the diffusion, after which the doping layer is removed without using a mask and while maintaining the thermal oxide layer, and the dopant is then further diffused in a second heating step. The thermal oxide layer serves as a partial masking against the diffusion, as an etchant stopper and in many cases also as a mask against ion implantation.
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Solo de Zaldivar Jose
Steinmaier Walter
Biren Steven R.
Broidy Thomas A.
Rutledge L. Dewayne
Saba W. G.
U.S. Philips Corporation
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