Method of manufacturing a semiconductor device utilizing a singl

Details Method of manufacturing a semiconductor device utilizing a singl Method of manufacturing a semiconductor device utilizing a singl

1988-02-24

1991-06-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 34, 437 57, 357 43, 357 59, H01L 21265

Patent

active

050266543

ABSTRACT:
Disclosed is here a semicondutor integrated circuit device and a method of manufacturing the same in which bipolar transistors and MISFETs are formed on a semiconductor substrate. Emitter and base electrodes of the bipolar transistors and gate, source, and drain electrodes of the MISFETs are constituted with the same polycrystalline layer, thereby realizing a high integration and a high-speed operation of a Bi-CMOS device.

REFERENCES:
patent: 4319932 (1982-03-01), Jambotkar
patent: 4503603 (1985-03-01), Blossfeld
patent: 4752529 (1988-06-01), Schaber
patent: 4808548 (1989-02-01), Thomas et al.

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