Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-10-03
1981-06-02
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29591, 148174, 357 59, 357 65, 357 71, H01L 21205, H01L 21441
Patent
active
042709601
ABSTRACT:
A method of manufacturing a semiconductor device is provided in which a masking layer is formed on a part of a surface of a monocrystalline semiconductor body and the semiconductor body is then subjected at the side of the surface to an epitaxial treatment from a gaseous phase, and an epitaxial layer is deposited of which a portion on the uncovered part of the surface is monocrystalline and a portion on the masking layer is polycrystalline. This method is characterized in that, prior to the epitaxial treatment, an amorphous or polycrystalline layer is deposited both on the masking layer and on the uncovered part of the surface at a temperature which is lower than that at which the epitaxial layer is deposited. In this layer the layer portion on the uncovered surface part changes into the monocrystalline state by a thermal treatment preceding the deposition of the epitaxial layer.
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Chaudhari et al., "Growing Crack-Free Single-Crystal Films," I.B.M. Tech. Discl. Bull., vol. 15, No. 9, Feb. 1973, p. 2700.
Chaudhari et al., "Annealing to Fill Cracks in Thin Films," Ibid., vol. 15, No. 9, Feb. 1973, p. 2697.
Bollen Lambertus J. M.
Goorissen Jan
Briody Thomas A.
Dean R.
Mayer Robert T.
Miller Paul R.
Saba W. G.
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