Method of manufacturing a semiconductor device utilizing...

Details Method of manufacturing a semiconductor device utilizing... Method of manufacturing a semiconductor device utilizing...

2005-05-31

2005-05-31

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S253000

Reexamination Certificate

active

06900062

ABSTRACT:
There are provided the steps of forming a first conductive layer, an oxide dielectric layer, and a second conductive layer sequentially over a first insulating layer formed over a semiconductor substrate, forming a capacitor consisting of an upper electrode, a dielectric layer, and a lower electrode made by patterning the second conductive layer, the oxide dielectric layer, and the first conductive layer, forming a second insulating layer over the capacitor and the first insulating layer, forming a hole in the second insulating layer on the upper electrode, and supplying an activated oxygen to the capacitor via the hole in a state that the semiconductor substrate is heated.

REFERENCES:
patent: 6114199 (2000-09-01), Isobe et al.
patent: 6368909 (2002-04-01), Koo
patent: 2003/0064604 (2003-04-01), Umeda
patent: 2003/0141527 (2003-07-01), Joo et al.
patent: 11-330390 (1999-11-01), None

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