Method of manufacturing a semiconductor device using amorphous s

Details Method of manufacturing a semiconductor device using amorphous s Method of manufacturing a semiconductor device using amorphous s

1986-02-19

1987-10-06

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG61, 148DIG82, 357 91, 437233, H01L 21265, H01L 21308

Patent

active

046973338

ABSTRACT:
A method of manufacturing a semiconductor device has the steps of forming an insulating film on a semiconductor substrate, forming a polycrystalline silicon layer on the insulating film, converting either all of the polycrystalline silicon layer or a portion of predetermined thickness of the polycrystalline silicon layer into an amorphous silicon layer, patterning the polycrystalline silicon layer, either all of which or a portion of predetermined thickness of which has been converted into an amorphous silicon layer, and ion-implanting an impurity in the semiconductor substrate using the patterned layer as a mask.

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Kwizera et al., "Grain Size Increase in Thin Polysilicon Films by Ion Implantation and Annealing, "VLSI Science and Tech., pp. 147-150, 1982.
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