Method of manufacturing a semiconductor device that uses a sapph

Details Method of manufacturing a semiconductor device that uses a sapph Method of manufacturing a semiconductor device that uses a sapph

1995-09-15

1997-05-06

Garrett, FeLisa C.

Semiconductor device manufacturing: process

Semiconductor substrate dicing

438479, 438973, H01L 21302

Patent

active

056271093

ABSTRACT:
A sapphire wafer is sliced off parallel to a plane "a" {1120} so that patterns on its top surface are rectangular in shape as defined by an axis "c" (0001) and an axis "m" (1010). The sapphire wafer is fixed on a table. A scriber blade that is coated with synthetic diamond scribes the surface of the sapphire wafer so that scribe lines are formed in a checkered pattern. One of the scribe lines is inclined from axis "c" (001) by 20 to 70 degrees in a clockwise direction and the other scribe line is inclined from the axis "c" (001) by 20 to 70 degrees in a counterclockwise direction. After scribing, pressure is applied by a roller along the scribe lines so as to cause the sapphire wafer to break into a sapphire chip. The yield of sapphire chips is increased by the use of this method because chipping is less likely to occur.

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English Abstract of Laid-Open No. 5-315646 (315646/1993) in Japan.
English Abstract of Laid-Open No. 2-291147 (291147/1990) in Japan.

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