Method of manufacturing a semiconductor device that includes...

Details Method of manufacturing a semiconductor device that includes... Method of manufacturing a semiconductor device that includes...

2007-06-19

2007-06-19

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S491000

Reexamination Certificate

active

09724403

ABSTRACT:
In a method of crystallizing a semiconductor film by introducing a metallic element that promotes crystallization, a gettering thereafter is effectively performed. A material film having a high tensile stress, typically a silicon nitride film, is formed in contact with the semiconductor film or heated after the formation thereof, thereby the metallic element in a crystalline semiconductor film is gettered to the material film having a high tensile stress. Thus, the metallic Interstitial silicon density element is removed or reduced to thereby form a gettered region.

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