Method of manufacturing a semiconductor device readily capable o

Details Method of manufacturing a semiconductor device readily capable o Method of manufacturing a semiconductor device readily capable o

1993-12-23

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 12, 437 61, 437 62, H01L 21306

Patent

active

054440017

ABSTRACT:
For removing contaminants (32) from a silicon substrate (31) having a principal surface (31a), a polycrystalline silicon film (34) is formed on an oxidation film (33) which is formed by oxidizing the principal surface. Selective oxidation is used. As a result, the contaminants are mainly concentrated around an interface between the oxidation and the polycrystalline silicon films. Thereafter, the oxidation and the polycrystalline silicon films are deleted from the silicon substrate. Therefore, the contaminants are eliminated from the silicon substrate together with the oxidation and the polycrystalline silicon films.

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