Metal treatment – Compositions – Heat treating
Patent
1982-09-15
1984-09-04
Roy, Upendra
Metal treatment
Compositions
Heat treating
148187, 29576B, 357 61, 357 64, 357 91, H01L 2934, H01L 21265
Patent
active
044695284
ABSTRACT:
The invention relates to a method of treating a substrate of gallium arsenide by a double ion implantation. A first implantation of silicon ions (Si.sup.+) is carried out on the entire surface of the substrate, and a second implantation of oxygen ions (O.sup.+) is carried out in regions intended to become isolated regions. A thermal annealing treatment, preferably under encapsulation, follows these ion implantations. These implantations are carried out in order to obtain at the surface of the substrate regions of n-conductivity type isolating regions separated from each other for subsequent manufacture of semiconductor devices. The invention also relates to a gallium arsenide substrate thus treated and to a semiconductor device obtained by the technique of two ion implantations.
REFERENCES:
patent: 4017887 (1977-04-01), Davies et al.
patent: 4383869 (1983-05-01), Liu
patent: 4396437 (1983-08-01), Kwok et al.
Sansbury et al., Radiation Effects, 6 (1970) pp. 269-276.
Donnelly et al., Appl. Phys. Letts. 27 (1975) 41.
Favennec et al., In Ion Implantation in S/C, ed. Crowder, Plenum, N.Y. 1974, p. 621.
Berth Michel
Martin Gerard M.
Venger Camille
Miller Paul R.
Roy Upendra
U.S. Philips Corporation
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