Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-07-19
2011-07-19
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S347000, C257SE29287, C438S149000, C438S295000, C438S311000
Reexamination Certificate
active
07982281
ABSTRACT:
According to one embodiment of the present invention, a SOI device includes a first composite structure including a substrate layer, a substrate isolation layer being disposed on or above the substrate layer, a buried layer being disposed on or above the substrate isolation layer, and a semiconductor layer being disposed on or above the buried layer; a trench structure being formed within the first composite structure; and a second composite structure provided on the side walls of the trench structure, wherein the second composite structure includes a first isolation layer covering the part of the side walls formed by the semiconductor layer and formed by an upper part of the buried layer; and a contact layer covering the isolation layer and the part of the side walls formed by a lower part of the buried layer.
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Infineon - Technologies AG
Laurenzi, III Mark A
Pham Thanh V
Slater & Matsil L.L.P.
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