Method of manufacturing a semiconductor device involving sidewal

Details Method of manufacturing a semiconductor device involving sidewal Method of manufacturing a semiconductor device involving sidewal

1986-12-15

1988-12-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437228, 437245, H01L 21308

Patent

active

047925345

ABSTRACT:
A method of manufacturing a semiconductor device having a submicron pattern. A p-type semiconductor layer is formed on an n-type semiconductor substrate. Insulating films are formed on the p-type semiconductor layer. A first mask layer, such as an aluminum layer having an etching rate different from that of the insulating films, is formed on the insulating films. A second mask layer having an etching rate different from that of the first mask layer, is formed on the first mask layer. The second mask layer is patterned. A coating film having an etching rate different from that of the first insulating film, is formed on the resultant structure. The coating film is etched to be left on a side wall of the patterned second mask layer. The first mask layer is patterned, using the residual coating film and the patterned second mask layer as masks, and a pattern finer than that of the resist is formed in the first mask layer. The insulating film is patterned, using the patterned first mask layer, and a pattern finer than that of the resist is formed in the insulating film. In the p-type semiconductor layer n+-type emitter and p+ base leading regions are formed, and the n-type semiconductor layer serves as a collector.

REFERENCES:
patent: 4472240 (1984-09-01), Kameyama
patent: 4532002 (1985-07-01), White
patent: 4543707 (1985-10-01), Ito et al.
patent: 4557797 (1985-12-01), Fuller et al.
Hafner et al. "Method of Producing Thin Film Patterns", vol. 26 #1 1983, pp. 276-277.
Bergasse et al. ". . . Two Levels of Metallurgy", IBM TDB, vol. 15 #8 1973, pp. 2407-2408.
Kaplan "Metals as Resists . . . ", IBM TDB, vol. 12 #12 1970, p. 2087.
Patel, K. "Plasma Etching . . . ", IBM TDB, vol. 20 #6 1977, pp. 2200-2201.
Gzarnyj et al., "Dry Development . . . ", vol. 24 #10 1982, pp. 5095-5096.
1983 Report of the Institute of Electronics and Communications Engineers of Japan, T. Furutsuka et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device involving sidewal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device involving sidewal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device involving sidewal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1909525