Method of manufacturing a semiconductor device involving a capac

Details Method of manufacturing a semiconductor device involving a capac Method of manufacturing a semiconductor device involving a capac

1985-03-04

1987-04-07

Bueker, Richard

Coating processes

Electrical product produced

Condenser or capacitor

427 79, 427 86, 427 87, 427 95, B05D 512

Patent

active

046560548

ABSTRACT:
A method is shown which manufactures a semiconductor device having a capacitor. An insulation film having at least one opening of a predetermined pattern is formed on a capacitor formation area on a semiconductor substrate. The opening reaches the surface portion of the semiconductor substrate to permit it to be exposed. A semiconductor layer is selectively grown on the bottom surface of the opening, i.e., on the exposed surface of the semiconductor substrate. Thereafter, the insulation film is removed to leave a recessed region in a capacitor formation area and a capacitor electrode is formed in the capacitor formation area with a gate insulation film therebetween.

REFERENCES:
patent: 4200474 (1980-04-01), Morris
Flanders, J. Vac. Sci. Technol. 19(4), Nov./Dec. 1981, pp. 892-896.

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