Method of manufacturing a semiconductor device incorporating a s

Details Method of manufacturing a semiconductor device incorporating a s Method of manufacturing a semiconductor device incorporating a s

1995-06-07

1997-02-11

Niebling, John

Fishing, trapping, and vermin destroying

437193, 437195, 437 41, 437228, H01L 2128

Patent

active

056020554

ABSTRACT:
A semiconductor device comprising a silicon substrate, an oxide layer on the silicon substrate, a doped polysilicon region disposed on the oxide layer, a dielectric layer which has been deposited over the doped polysilicon region and the silicon substrate, a contact hole which is formed in the dielectric layer and extends over respective laterally adjacent portions of the doped polysilicon region and the silicon substrate and a contact which has been selectively deposited in the contact hole which electrically connects the said portions together. The invention also provides a method of fabricating a semiconductor device incorporating a refractory metal contact, the method comprising the steps of:--a) providing a semiconductor substrate having an oxide layer thereon and a doped polysilicon region disposed on the oxide layer; (b) depositing a dielectric layer over the doped polysilicon region and over the silicon substrate; (c) forming a contact hole in the dielectric layer which exposes a portion of the doped polysilicon region and a laterally adjacent portion of the silicon substrate; and (d) selectively depositing a contact into the contact hole thereby electrically to connect together the doped polysilicon region and the silicon substrate.

REFERENCES:
patent: 4042953 (1977-08-01), Hall
patent: 4859630 (1989-08-01), Josquin
patent: 4912540 (1990-03-01), Sander et al.
patent: 5030584 (1991-07-01), Nakata et al.
patent: 5099308 (1992-03-01), Murayama
patent: 5106780 (1992-04-01), Higuchi
patent: 5148247 (1992-09-01), Miura
patent: 5210053 (1993-05-01), Yamagata
patent: 5210429 (1993-05-01), Adan
patent: 5234850 (1993-08-01), Liao
patent: 5245210 (1993-09-01), Nishigoori
patent: 5286674 (1994-02-01), Roth et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device incorporating a s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device incorporating a s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device incorporating a s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-341625