Method of manufacturing a semiconductor device including Schottk

Details Method of manufacturing a semiconductor device including Schottk Method of manufacturing a semiconductor device including Schottk

1985-06-21

1986-10-28

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 148 15, 148DIG19, 148DIG147, 357 15, 357 67, 427 84, 427 89, H01L 2140

Patent

active

046190350

ABSTRACT:
A method of manufacturing a semiconductor device manufactures a semiconductor device provided with plural kinds of Schottky barrier diodes having different forward voltages on one substrate. The method includes (a) a step of forming at least one Schottky barrier diode of a first kind, and (b) a step of forming at least one Schottky barrier diode of a second kind. The step (a) is performed by placing a first metal layer at a first surface part of a silicon substrate, and then by silicifying the first metal layer. The step (b) is performed by plating, at a second surface part of the silicon substrate which is different from the first surface part of the silicon substrate, a second metal layer which consists of a metal different from the metal consisting of the first metal layer and then by silicifying the second metal layer. Thus a semiconductor device provided with plural kinds of Schottky barrier diodes having different forward voltages on one substrate which is suitable for STL (Schottky Transistor Logic) etc. is obtained.

REFERENCES:
patent: 4107835 (1978-08-01), Bindell et al.
patent: 4394673 (1983-07-01), Thompson et al.
Ghandi, V.L.S.I. Fabrication Principles Silicon and Germanium Arsenide, John Wiley & Sons, New York, 1983, pp. 435-436.
IEEE Journal of Solid-State Circuits, vol. SC-19, No. 2, Apr. 1984, STL Versus ISL: An Experimental Comparison, Frank W. Hewlett, Jr.

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