Method of manufacturing a semiconductor device including a titan

Details Method of manufacturing a semiconductor device including a titan Method of manufacturing a semiconductor device including a titan

1988-04-04

1990-02-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437178, 437188, 437246, 437193, 148DIG147, H01L 21285

Patent

active

049046209

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device, in which a titanium disilicide layer is formed on a substrate by means of a chemical reaction activated by a plasma from the gaseous phase. In a readily reproducible manner, this is achieved in that titanium silicide layers (2,4,6) having an atomic ratio of titanium to silicon of at least about 4:5 and silicon layers (3,5,7) are alternately deposited from the gaseous phase and these layers are homogenized in a heat treatment to a titanium disilicide layer.

REFERENCES:
patent: 4337476 (1982-06-01), Fraser et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4504521 (1985-03-01), Widmer et al.
patent: 4557943 (1985-12-01), Rosler et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4668530 (1987-05-01), Reif et al.
Ahmad et al., Thin Solid Films, 143 (1986), pp. 155-162.
Morgan et al., J. Vac. Sci. Technol. B4(3), May/Jun. 1986, pp. 723-731.

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