Method of manufacturing a semiconductor device, in which metal s

Details Method of manufacturing a semiconductor device, in which metal s Method of manufacturing a semiconductor device, in which metal s

1988-12-28

1989-12-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 43, 437 44, 437200, 437202, 148DIG147, H01L 2100, H01L 2102, H01L 21285, H01L 2126

Patent

active

048852597

ABSTRACT:
A method of manufacturing a semiconductor device comprising a field effect transistor having an insulated gate electrode (11) of doped polycrystalline silicon, which is provided on a surface (5) of a semiconductor substrate (1), in which further source and drain zones (17, 18) of the transistor are formed. The source and drain zones (17, 18) and the gate electrode (11) are provided in a self-registered manner with a top layer of a metal silicide (27). According to the invention, during the formation of the gate electrode (11) in a layer of polycrystalline silicon (7), an etching mask (10) containing silicon nitride is used. Thus, without the gate oxide (6) lying under the layer of polycrystalline silicon (7) being covered with organic residues that can be removed only with difficulty, a gate electrode (11) can be otained with side edges (12) directed transversely to the surface (5).

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