Method of manufacturing a semiconductor device in which dopant a

Details Method of manufacturing a semiconductor device in which dopant a Method of manufacturing a semiconductor device in which dopant a

1993-11-16

1995-05-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437134, 437140, 437141, 437 25, H01L 2140

Patent

active

054181844

ABSTRACT:
A method of manufacturing a semiconductor device includes the step of providing a dopant (4) near a surface (2) of a semiconductor body (1) in a deposition step, after which in a diffusion step the dopant (4) is diffused into the semiconductor body (1) by keeping the semiconductor body (1) at an elevated temperature for a certain period in a furnace (11) while a process gas (13) is being passed through the furnace (11), after which any oxide layer (8) formed on the surface (2) is removed. A small amount of a hydrogen halide is added to the process gas (13), and it has been found that the creation of lattice dislocations in semiconductor devices is reduced thereby because impurities which play a part in the creation of lattice dislocations react with the hydrogen halide and are removed.

REFERENCES:
patent: 3556879 (1971-01-01), Mayer
patent: 4514440 (1985-04-01), Justice et al.
patent: 4998879 (1991-03-01), Foster et al.
patent: 5124272 (1992-06-01), Saito et al.
patent: 5244831 (1993-09-01), Hindman et al.

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