Fishing – trapping – and vermin destroying
Patent
1989-12-11
1990-08-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 72, 437228, H01L 2176
Patent
active
049525255
ABSTRACT:
A method of manufacturing a semiconductor device, in which on a surface (1) of a silicon wafer (2) an oxidation mask (3) is locally provided, whereupon the wafer is subjected to an oxidation treatment, in which a layer of field oxide (8) is formed. In order to compensate for thickness losses during further processing steps, a layer of field oxide (8) has to be formed having a thickness exceeding a desired isolation thickness. This initial thickness is realized according to the invention in such a manner that a layer is formed having a thickness which is larger than the initial thickness, whereupon in a plasma with reactive ions this layer is etched back to the desired initial thickness. In the layer thus formed, having the desired initial thickness, the layer of field oxide is prevented from locally being etched in an etching solution (such as the hydrofluoride solution) at a higher rate during further processing steps.
REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 3783047 (1974-01-01), Paffen et al.
patent: 4539744 (1985-09-01), Burton
patent: 4612701 (1986-09-01), Cox
patent: 4743566 (1988-05-01), Bastiaens et al.
Chaudhuri Olik
Miller Paul R.
U.S. Philips Corporation
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