Method of manufacturing a semiconductor device, in which a metal

Details Method of manufacturing a semiconductor device, in which a metal Method of manufacturing a semiconductor device, in which a metal

1993-06-04

1994-11-22

Quach, T. N.

Fishing, trapping, and vermin destroying

437193, 437195, 437200, 148DIG1, 148DIG15, 257764, H01L 21283

Patent

active

053669282

ABSTRACT:
A method of manufacturing a semiconductor device is set forth comprising a semiconductor body (1) having a surface (2) adjoined by a semiconductor region (3) and a field oxide region (4) surrounding this region, on which surface (2) is provided a metal layer (13), in which a conductor track (17, 18) is formed, after which an isolating layer of silicon oxide (19) is deposited over the conductor track (17, 18) on the surface (2). According to the invention, before the layer of silicon oxide (19) is provided over the conductor track (17, 18), this track is provided with a top layer (16) of an oxidation-preventing material. By providing this top layer (16), it is avoided that the conductor track (17, 18) covered by silicon oxide (19) has a high electrical resistance or even an electrical interruption.

REFERENCES:
patent: 3806361 (1974-04-01), Lehner
patent: 3859127 (1975-01-01), Lehner
patent: 4086613 (1978-04-01), Biet et al.
patent: 4106051 (1978-08-01), Dolmer et al.
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4491860 (1985-01-01), Lim
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4567058 (1986-01-01), Koh
patent: 4570328 (1986-02-01), Price et al.
patent: 4622735 (1986-11-01), Shibata
patent: 4624737 (1986-11-01), Shimbo
patent: 4761386 (1988-08-01), Buynoski
patent: 4965218 (1990-10-01), Geissberger et al.
Panko, et al., Appl. Phys. Lett., 34(2), 15 Jan. 1979, pp. 156-157.
Weitzel et al., Thin Solid Films, 75 (1981), pp. 143-150.
Wittmer, et al., Thin Solid Films, 93, 1982, 397-405.
Sze, S. VLSI Technology, 1983, McGraw-Hill, pp. 106-111.
Wolf, S., et al., Silicon Processing, 1986, Lattice Press, pp. 182-185.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device, in which a metal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, in which a metal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device, in which a metal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1991334