Method of manufacturing a semiconductor device having SOI struct

Details Method of manufacturing a semiconductor device having SOI struct Method of manufacturing a semiconductor device having SOI struct

1995-06-05

1997-08-12

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

And gettering of substrate

438404, 438154, 438165, H01L 2176

Patent

active

056565372

ABSTRACT:
A buried oxide film and an SOI layer are formed on the main surface of a substrate. A nitride film patterned in predetermined configuration is formed on the surface of the SOI layer. The first selective oxidation treatment is applied to the SOI layer with the nitride film used as a mask. At this stage, the isolating oxide film is formed not to reach the buried oxide film. Anisotropic etching is applied to the isolating oxide film with the nitride film used as a mask. A sidewall insulating layer of oxidation-resistant material is formed on the sidewall of the nitride film. With the sidewall insulating layer and nitride film used as masks, the second selective oxidation treatment is applied to the SOI layer, thereby forming an isolating oxide film. Thereby, it becomes possible to prevent a parasitic MOS transistor being formed in the end of the SOI layer.

REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
Electronics Letters; Aug. 18, 1983, vol. 19, No. 17, pp. 684-685, "Subthreshold Currents in CMOS Transistors Made on Oxygen-Implanted Silicon."

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