Method of manufacturing a semiconductor device having silicide

Details Method of manufacturing a semiconductor device having silicide Method of manufacturing a semiconductor device having silicide

1994-09-08

1996-06-25

Fourson, George

Fishing, trapping, and vermin destroying

437201, H01L 21768

Patent

active

055299580

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device, including the steps of forming, on a silicon substrate, a metal film to be converted into a silicide, continuously forming a thin film on the metal film, and performing annealing of a structure body constituted by the silicon substrate, the metal film, and the thin film at a temperature at which the metal film is reacted with the silicon substrate.

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